Fully depleted dual-gated thin-film SOI P-MOSFET's fabricated in SOI islands with an isolated buried polysilicon backgate

IEEE Electron Device Letters

Volumn 17, Issue 11, 1996, Pages 509-511

  Denton, Jack P ^b   Neudeck, Gerold W ^a,b  

^a IEEE

^b PURDUE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EPITAXIAL GROWTH; INTERFACES (MATERIALS); SEMICONDUCTING FILMS; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR GROWTH; SILICON ON INSULATOR TECHNOLOGY;

CHEMICAL MECHANICAL PLANARIZATION; EPITAXIAL LATERAL OVERGROWTH; POLYSILICON BACKGATE; THRESHOLD VOLTAGE;

MOSFET DEVICES;

EID: 0030283640     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.541764     Document Type: Article

References (8)

1. J. Kessler, J. Glenn Jr., and G. W. Neudeck, "Low defect silicon epitaxial lateral overgrowth planar SOI islands adjacent to selective epitaxial growth (SEG)," Microelectron. Eng., vol. 28, no. 1-4, pp. 435-438, 1995.
2. J. L. Glenn Jr., G. W. Neudeck, C. K. Subramanian, and J. P. Denton, "A fully planar method for creating adjacent self-isolating silicon on insulator by epitaxial lateral overgrowth," Appl. Phys. Lett., vol. 60, no. 4, pp. 483-485, 1992.
3. J. P. Denton and G. W. Neudeck, "Fully depleted dual-gated thin-film SOI P-MOSFET with an isolated buried polysilicon backgate," in IEEE 1995 SOI Conf., Tucson, AZ, Oct. 4-7, 1995, pp. 135-136.
4. I. Yang, C. Vieri, A. Chandrakasan, and D. A. Antoniadis, "Back gated CMOS on SOIAS for dynamic threshold voltage control," in IEDM Tech. Dig., Dec. 1995, pp. 977.
5. + double-gate SOI MOSFET," IEEE Electron Device Lett., vol. 15, no. 10, pp. 386, 1994.
6. P. C. Yang and S. S. Li, "Interface characterization of fully depleted SOI MOSFET's by a threshold-voltage method," Solid-State Electron., vol. 36, no. 5 pp. 801, 1993.
7. D. J. Wouters, J. P. Colinge, and H. E. Maes, "Subthreshold slope in thin-film SOI MOSFET's," IEEE Trans. Electron Devices, vol. 37, no. 9, pp. 2022, 1990.
8. L. T. Su, J. E. Chung, A. D. Antoniadis, K. E. Goodson, and M. I. Filk "Measurement and modeling of self-heating in SOI n-MOSFET," IEEE Trans. Electron Devices, vol. 41, no. 1, pp. 69-75, 1994.