Enabling technologies for forming and contacting shallow junctions in Si: HF-vapor cleaning and selective epitaxial growth of Si and SiGe

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 17, Issue 5, 1999, Pages 2311-2320

  Raaijmakers, Ivo J ^a  

^a ASM AMERICA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 22844455259     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.590910     Document Type: Article

References (3)

1. E. Shero, A. B. Storm, H. Sprey, J. W. Maes, and C. J. Werkhoven, J. Vac. Sci. Technol. (to be published).
2. J. Sun, R. F. Bartholomew, K. Bellur, A. Srivasta, C. M. Osbum, and N. A. Masnari, J. Electrochem. Soc. 145, 2131 (1998).
3. F. W. Smith and G. Ghidini, J. Electrochem. Soc. 129, 1300 (1982).