Low pressure metalorganic vapor phase epitaxial growth of GaN/GaInN heterostructures

Solid-State Electronics

Volumn 41, Issue 2 SPEC. ISS., 1997, Pages 141-144

  Scholz, F ^a   Harle V ^a   Bolay, H ^a   Steuber, F ^a   Kaufmann, B ^a   Reyher, G ^a   Dornen A ^a   Gfrorer O ^a   Im, S J ^a   Hangleiter, A ^a  

^a UNIVERSITY OF STUTTGART   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

METALLORGANIC VAPOR PHASE EPITAXY; NITRIDES; NUCLEATION; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM WELLS; X RAY DIFFRACTION;

GALLIUM NITRIDE (GAN) LAYERS; HALL EXPERIMENTS;

HETEROJUNCTIONS;

EID: 0040587213     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/s0038-1101(96)00154-2     Document Type: Article

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