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Technical digest of 1996 International Electron Devices Meeting, pp.77-80, Dec. 1996.
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S. Ikeda, Y. Hagiwara, H. Miura, and H. Ohta, The impact of mechanical stress control on VLSI fabrication process Technical digest of 1996 International Electron Devices Meeting, pp.77-80, Dec. 1996.
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The Impact of Mechanical Stress Control on VLSI Fabrication Process
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Ikeda, S.1
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tribologist, vol.40, no.3, pp.228-233, 1995.
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H. Miura, Residual stress in thin films tribologist, vol.40, no.3, pp.228-233, 1995.
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Residual Stress in Thin Films
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Microelectronics Journal, vol.26, pp. 113-116, 1995.
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J. Lorenz, C. Hill, H. Jaouen, C. Lombardi, C. Lyden, K. de Meyer, J. Pelka, A. Poncet, M. Rudan, and S. Solmi, The STORM technology CAD system Microelectronics Journal, vol.26, pp. 113-116, 1995.
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The STORM Technology CAD System
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Proc. 1993 Int. Workshop on VLSI Processes and Device Modeling (VPAD'93), pp.60-63, June 1993.
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H. Miura, N. Saito, H. Ohta, N. Okamoto, and H. Masuda, Mechanical stress design system for semiconductor devices Proc. 1993 Int. Workshop on VLSI Processes and Device Modeling (VPAD'93), pp.60-63, June 1993.
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Mechanical Stress Design System for Semiconductor Devices
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Miura, H.1
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JSME International Journal, Series A, vol.36, no.3, pp.302-308, 1993.
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H. Miura, H. Ohta, H. Sakata, and N.Okamoto, Residual stress measurement in silicon substrate after thermal oxidation JSME International Journal, Series A, vol.36, no.3, pp.302-308, 1993.
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Residual Stress Measurement in Silicon Substrate after Thermal Oxidation
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Miura, H.1
Ohta, H.2
Sakata, H.3
Okamoto, N.4
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0024870442
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Technical Digest of 1989 International Electron Devices Meeting, pp.695-698, 1989.
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N. Saito, H. Miura, S. Sakata, M. Ikegawa, T. Shimizu, and H. Masuda, A two-dimensional thermal oxidation simulator using visco-elastic stress analysis Technical Digest of 1989 International Electron Devices Meeting, pp.695-698, 1989.
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A Two-dimensional Thermal Oxidation Simulator Using Visco-elastic Stress Analysis
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Saito, N.1
Miura, H.2
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Ikegawa, M.4
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JSME International Journal, Series A, vol.38, no.2 , pp.258-264, 1995.
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H. Miura, N. Saito, H. Ohta, and N. Okamoto, Residual stress in silicon substrate with shallow trenches on sutrface after local thermal oxidation JSME International Journal, Series A, vol.38, no.2 , pp.258-264, 1995.
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Residual Stress in Silicon Substrate with Shallow Trenches on Sutrface after Local Thermal Oxidation
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Miura, H.1
Saito, N.2
Ohta, H.3
Okamoto, N.4
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Trans. JSME, vol.55, no.515A, pp.1652-1657, 1989.
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N. Saito, S. Sakata, T. Shimizu, S. Isomae, and H. Masuda, Development of SIMUS 2D/F: A stress analysis program for thin multilayer structure Trans. JSME, vol.55, no.515A, pp.1652-1657, 1989.
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Development of SIMUS 2D/F: a Stress Analysis Program for Thin Multilayer Structure
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Saito, N.1
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Microelectronics Journal, vol.26, pp.249253, 1995.
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H. Miura, N. Saito, and N. Okamoto, Mechanical stress simulation during gate formation of MOS devices considering crystallization-induced stress of phosphorus-doped silicon thin films Microelectronics Journal, vol.26, pp.249253, 1995.
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Mechanical Stress Simulation during Gate Formation of MOS Devices Considering Crystallization-induced Stress of Phosphorus-doped Silicon Thin Films
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Miura, H.1
Saito, N.2
Okamoto, N.3
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85027176004
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Tech. Digest of APCFS3, pp.735-738, 1993.
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H. Ohta, M. Zen, II. Sakata, H. Miura, and N. Okamoto, Development and application for measuring mechanical properties of thin films at high temperatures Tech. Digest of APCFS3, pp.735-738, 1993.
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Development and Application for Measuring Mechanical Properties of Thin Films at High Temperatures
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Ohta, H.1
Zen, M.2
Sakata, I.I.3
Miura, H.4
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Appl. Phys. Lett., vol.60, no.22, pp.2746-2748, 1992.
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H. Miura, H. Ohta, and N. Okamoto, Crystallizationinduced stress in silicon thin films Appl. Phys. Lett., vol.60, no.22, pp.2746-2748, 1992.
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Crystallizationinduced Stress in Silicon Thin Films
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Miura, H.1
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Okamoto, N.3
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0030396086
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Technical Digest of International Electron Devices Meeting, pp.743-746, 1996.
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H. Miura, S. Ikeda, and N. Suzuki, Effect of mechanical stress on reliability of gate-oxide film in MOS transistors Technical Digest of International Electron Devices Meeting, pp.743-746, 1996.
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Effect of Mechanical Stress on Reliability of Gate-oxide Film in MOS Transistors
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Miura, H.1
Ikeda, S.2
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IEEE Trans. Electron Devices, vol.38, no.4, pp.895-900, 1991.
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A. Hamada, T. Furusawa, N. Saito, and E. Takeda, A new aspect of mechanical stress effects in scaled MOS devices IEEE Trans. Electron Devices, vol.38, no.4, pp.895-900, 1991.
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A New Aspect of Mechanical Stress Effects in Scaled MOS Devices
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Hamada, A.1
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Technical Digest of International Electron Devices Meeting, pp.386-389, 1980.
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J. Mitsuhashi, S. Nakao, and T. Matsukawa, Mechanical stress and hydrogen effects on hot carrier injection Technical Digest of International Electron Devices Meeting, pp.386-389, 1980.
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Mechanical Stress and Hydrogen Effects on Hot Carrier Injection
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Mitsuhashi, J.1
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IEEE Trans. Electron Devices, vol.ED-29, no.l, pp.C4-70, 1982.
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Y. Kanda, A graphical representation of the piezorcsistance coefficients in silicon IEEE Trans. Electron Devices, vol.ED-29, no.l, pp.C4-70, 1982.
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A Graphical Representation of the Piezorcsistance Coefficients in Silicon
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