A Graphical Representation Of The Piezoresistance Coefficients In Silicon

IEEE Transactions on Electron Devices

Volumn 29, Issue 1, 1982, Pages 64-70

  Kanda, Yozo ^a  

^a HAMAMATSU UNIVERSITY SCHOOL OF MEDICINE   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTING SILICON;

EID: 0019916789     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/T-ED.1982.20659     Document Type: Article

References (15)

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8. A. H. Wilson, Theory of Metals, 2nd ed. Cambridge, England: Cambridge Univ. Press, 1953, p. 147.
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10. O. N. Tufte and E. L. Stelzer, “Piezoresistive properties of heavily doped n-type silicon,” Phys. Rev., vol. 133, pp. A1705-A1716, 1964.
11. C. Herring and E. Vogt, “Transport and deformation-potential theory for many-valley semiconductors with anisotropic scattering,” Phys. Reu.,vol. 101, pp. 944-961, 1956.
12. Y. Kanda, “Effect of stress on germanium and silicon p-n junction,” Jap. J. Appl. Phys., vol. 6, pp. 475-485, 1967.
13. J. J. Wortman and R. A. Evans, “Youngs modulus, shear modulus, and Poissons ratio in silicon and germanium,” J. Appl.
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15. O. N. Tufte and E. L. Stelzer, “Piezoresistance properties of silicon diffused layers,” J. Appl. Phys., vol. 34, pp. 313-318, 1963. 1960, pp. 149-221. PhyS.,vol. 36,pp. 153-156, 1965.