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Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 1996, Pages 743-746

Effect of Mechanical Stress on Reliability of Gake-Oxide Film in MOS Transistors

(3) Miura, H a Ikeda, S a Suzuki, N a

a HITACHI LTD (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC MATERIALS; ELECTRODES; FAILURE ANALYSIS; FIELD EFFECT TRANSISTORS; GATE DIELECTRICS; OXIDE FILMS; STRESSES; THIN FILM CIRCUITS; THIN FILM TRANSISTORS; THIN FILMS; DIELECTRIC PROPERTIES; ELECTRIC BREAKDOWN; GATES (TRANSISTOR); MOSFET DEVICES; OXIDES; RAMAN SPECTROSCOPY; RELIABILITY; RESIDUAL STRESSES; SEMICONDUCTING SILICON; STRESS ANALYSIS;

BREAKDOWN CHARACTERISTICS; CRITICAL STRESS; FAILURE RATE; GATE ELECTRODES; GATE OXIDE FILMS; MECHANICAL STRESS; SILICON SUBSTRATES; STRESS FIELD; THIN-FILMS; TIME-DEPENDENT DIELECTRIC BREAKDOWN;

REFRACTORY METAL COMPOUNDS; SEMICONDUCTING FILMS;

GATE ELECTRODES; GATE OXIDE FILM; INITIAL BREAKDOWN FAILURE RATE; MECHANICAL STRESS EFFECT;

EID: 0030396086 PISSN: 01631918 EISSN: None Source Type: Conference Proceeding
DOI: 10.1109/IEDM.1996.554087 Document Type: Conference Paper

Times cited : (30)

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