Characterization and elimination of trench dislocations

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 1998, Pages 212-213

  Damiano, J ^a   Subramanian, C K ^a   Gibson, M ^a   Feng, Y S ^a   Zeng, L ^a   Sebek, J ^a   Deeters, E ^a   Feng, C ^a   McNelly, T ^a   Blackwell, M ^a   Nguyen, H ^a   Tian, H ^a   Scott, J ^a   Zaman, J ^a   Honcik, C ^a  

^a MOTOROLA INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CMOS INTEGRATED CIRCUITS; DENSIFICATION; DISLOCATIONS (CRYSTALS); RANDOM ACCESS STORAGE;

STATIC RANDOM ACCESS MEMORY (SRAM); TRENCH DISLOCATIONS;

INTEGRATED CIRCUIT MANUFACTURE;

EID: 0031644046     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)