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Volumn 38, Issue 2, 1995, Pages 258-264
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Residual stress in silicon substrate with shallow trenches on surface after local thermal oxidation
a
a
HITACHI LTD
(Japan)
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Author keywords
[No Author keywords available]
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Indexed keywords
FILMS;
FINITE ELEMENT METHOD;
MECHANICAL VARIABLES MEASUREMENT;
OXIDATION;
RAMAN SPECTROSCOPY;
SEMICONDUCTING SILICON;
STRESSES;
SUBSTRATES;
SURFACES;
COMPRESSIVE STRESS;
MICROSCOPIC RAMAN SPECTROSCOPY;
NITRIDE FILM;
OXIDATION INDUCED STRESS;
SHALLOW TRENCHES;
STRESS DEVELOPMENT PROCESS;
TENSILE STRESS;
THERMAL OXIDATION;
THERMAL OXIDE FILM;
VOLUME EXPANSION;
RESIDUAL STRESSES;
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EID: 0029291805
PISSN: 09148809
EISSN: None
Source Type: Journal
DOI: 10.1299/jsmea1993.38.2_258 Document Type: Article |
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Times cited : (3)
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References (8)
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