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Volumn 26, Issue 2-3, 1995, Pages 249-253
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Mechanical stress simulation during gate formation of MOS devices considering crystallization-induced stress of phosphorus-doped silicon thin films
a
a
NONE
(Japan)
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Author keywords
[No Author keywords available]
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Indexed keywords
ANNEALING;
CRYSTALLIZATION;
DEPOSITION;
GATES (TRANSISTOR);
PHOSPHORUS;
SEMICONDUCTING SILICON;
SEMICONDUCTOR DOPING;
SIMULATION;
STRESS ANALYSIS;
SUBSTRATES;
THIN FILMS;
TRANSISTORS;
GATE EDGES;
GATE MATERIALS;
STRESS CONTROL;
MOS DEVICES;
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EID: 0029276466
PISSN: 00262692
EISSN: None
Source Type: Journal
DOI: 10.1016/0026-2692(95)98926-I Document Type: Article |
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Times cited : (10)
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References (5)
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