-
2
-
-
0029223662
-
-
1995, pp. 276-283.
-
C. Diaz, T. Kopley, and P. Marcoux, "Building-in ESD/EOS reliability for sub-half-micron CMOS processes, " in Proc. IRPS, 1995, pp. 276-283.
-
T. Kopley, and P. Marcoux, "Building-in ESD/EOS Reliability for Sub-half-micron CMOS Processes, " in Proc. IRPS
-
-
Diaz, C.1
-
3
-
-
0024122729
-
-
vol. 35, pp. 2133-2139, 1988.
-
C. Duvvury, R. N. Rountree, and O. Adams, "Internal chip ESD phenomena beyond the protection circuit, " IEEE Trans. Electron Devices, vol. 35, pp. 2133-2139, 1988.
-
R. N. Rountree, and O. Adams, "Internal Chip ESD Phenomena beyond the Protection Circuit, " IEEE Trans. Electron Devices
-
-
Duvvury, C.1
-
6
-
-
0029529070
-
-
1995, pp. 175-185.
-
M. Kelly, G. Servais, T. Diep, D. Lin, S. Twerefour, and G. Shah, "A comparison of electrostatic discharge models and failure signatures for CMOS integrated circuit devices, " in Proc. EOS/ESD Symp., 1995, pp. 175-185.
-
G. Servais, T. Diep, D. Lin, S. Twerefour, and G. Shah, "A Comparison of Electrostatic Discharge Models and Failure Signatures for CMOS Integrated Circuit Devices, " in Proc. EOS/ESD Symp.
-
-
Kelly, M.1
-
7
-
-
33746993461
-
-
1996, pp. 143-146.
-
C.-N. Wu, M.-D. Ker, L.-J. Lui, S.-Y. Yeh, T.-L. Yu, S.-T. Lin, K.-L. Young, and K.-Y. Chiu, "Unexpected ESD damage on internal circuits of sub-ft m CMOS technology, " in Proc. Int. Electron Devices Materials Symp., 1996, pp. 143-146.
-
M.-D. Ker, L.-J. Lui, S.-Y. Yeh, T.-L. Yu, S.-T. Lin, K.-L. Young, and K.-Y. Chiu, "Unexpected ESD Damage on Internal Circuits of Sub-ft M CMOS Technology, " in Proc. Int. Electron Devices Materials Symp.
-
-
Wu, C.-N.1
-
8
-
-
0030273995
-
-
7th Europ. Symp. Reliability of Electron Devices, Failure Physics and Analysis, 1996, pp. 1727-1730.
-
M.-D. Ker and T.-L. Yu, "ESD protection to overcome internal gateoxide damage on digital-analog interface of mixed-mode CMOS IC's, " in Proc. 7th Europ. Symp. Reliability of Electron Devices, Failure Physics and Analysis, 1996, pp. 1727-1730.
-
And T.-L. Yu, "ESD Protection to Overcome Internal Gateoxide Damage on Digital-analog Interface of Mixed-mode CMOS IC's, " in Proc.
-
-
Ker, M.-D.1
-
9
-
-
0031371986
-
-
1997, pp. 346-355.
-
M. Chaîne, S. Smith, and A. Bui, "Unique ESD failure mechanisms during negative to Vcc HBM tests, " in Proc. EOS/ESD Symp., 1997, pp. 346-355.
-
S. Smith, and A. Bui, "Unique ESD Failure Mechanisms during Negative to Vcc HBM Tests, " in Proc. EOS/ESD Symp.
-
-
Chaîne, M.1
-
10
-
-
0027882751
-
-
1993, pp. 225-231.
-
C. C. Johnson, T. J. Maloney, and S. Qawami, "Two unusual HBM ESD failure mechanisms on a mature CMOS process, " in Proc. EOS/ESD Symp., 1993, pp. 225-231.
-
T. J. Maloney, and S. Qawami, "Two Unusual HBM ESD Failure Mechanisms on A Mature CMOS Process, " in Proc. EOS/ESD Symp.
-
-
Johnson, C.C.1
-
11
-
-
0027702157
-
-
vol. 40, pp. 2081-2083, 1993.
-
H. Terletzki, W. Nikutta, and W. Reczek, "Influence of the series resistance of on-chip power supply buses on internal device failure after ESD stress, " IEEE Trans. Electron Devices, vol. 40, pp. 2081-2083, 1993.
-
W. Nikutta, and W. Reczek, "Influence of the Series Resistance of On-chip Power Supply Buses on Internal Device Failure after ESD Stress, " IEEE Trans. Electron Devices
-
-
Terletzki, H.1
-
15
-
-
33746957755
-
-
1992, pp. 228-233.
-
N. Maene, J. Vandenbroeck, and L. V. D. Bempt, "On chip electrostatic discharge protections for inputs, outputs, and supplies of CMOS circuits, " in Proc. EOS/ESD Symp., 1992, pp. 228-233.
-
J. Vandenbroeck, and L. V. D. Bempt, "On Chip Electrostatic Discharge Protections for Inputs, Outputs, and Supplies of CMOS Circuits, " in Proc. EOS/ESD Symp.
-
-
Maene, N.1
-
17
-
-
0028744520
-
-
1994, pp. 141-149.
-
S. Dabral, R. Aslett, and T. Maloney, "Core clamps for low voltage technologies, " in Proc. EOS/ESD Symp., 1994, pp. 141-149.
-
R. Aslett, and T. Maloney, "Core Clamps for Low Voltage Technologies, " in Proc. EOS/ESD Symp.
-
-
Dabral, S.1
-
18
-
-
0029478654
-
-
1995, pp. 13-20.
-
E. R. Worley, R. Gupta, B. Jones, R. Kjar, C. Nguyen, and M. Tennyson, "Submicron chip ESD protection schemes which avoid avalanching junctions, " in Proc. EOS/ESD Symp., 1995, pp. 13-20.
-
R. Gupta, B. Jones, R. Kjar, C. Nguyen, and M. Tennyson, "Submicron Chip ESD Protection Schemes Which Avoid Avalanching Junctions, " in Proc. EOS/ESD Symp.
-
-
Worley, E.R.1
-
23
-
-
0031352418
-
-
1997, pp. 230-239.
-
J.-Z. Chen, A. Amerasekera, and C. Duvvury, "Design methodology for optimizing gate driven ESD protection circuits in submicron CMOS processes, " in Proc. EOS/ESD Symp., 1997, pp. 230-239.
-
A. Amerasekera, and C. Duvvury, "Design Methodology for Optimizing Gate Driven ESD Protection Circuits in Submicron CMOS Processes, " in Proc. EOS/ESD Symp.
-
-
Chen, J.-Z.1
-
24
-
-
33746969746
-
-
5440162, Aug. 1995.
-
E. Worley, B. Jones, and R. Gupta, "ESD protection for submicron CMOS circuits, " U.S. Patent 5440162, Aug. 1995.
-
B. Jones, and R. Gupta, "ESD Protection for Submicron CMOS Circuits, " U.S. Patent
-
-
Worley, E.1
|