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Volumn 46, Issue 5, 1999, Pages 933-939

Modeling the short-channel threshold voltage of a novel vertical heterojunction pMOSFET

Author keywords

[No Author keywords available]

Indexed keywords

HETEROJUNCTIONS; SEMICONDUCTING GERMANIUM; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MODELS; THRESHOLD VOLTAGE;

EID: 0032687551     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.760400     Document Type: Article
Times cited : (5)

References (19)
  • 5
    • 0028405278 scopus 로고    scopus 로고
    • Vertical Si-metal-oxide-semiconductor field effect transistors with channel lengths of 50 nm by molecular beam epitaxy
    • H. Gossner I. Eisele and L. Risch Vertical Si-metal-oxide-semiconductor field effect transistors with channel lengths of 50 nm by molecular beam epitaxy Jpn. J. Appl. Phys. vol. 33 pp. 2423-2428 Apr. 1994.
    • Jpn. J. Appl. Phys. Vol. 33 Pp. 2423-2428 Apr. 1994.
    • Gossner, H.1    Eisele, I.2    Risch, L.3
  • 9
    • 33749689245 scopus 로고    scopus 로고
    • U.S. Provisional Patent Application Number 60/001 022 July 7 1995 C. J. R. P. Augusto IMEC.
    • U.S. Provisional Patent Application Number 60/001 022 July 7 1995 C. J. R. P. Augusto IMEC.
  • 10
  • 17
    • 0041971896 scopus 로고    scopus 로고
    • Analytical calculations of a figure of merit for novel MOSFET architecture's for the sub-0.25-μm range in
    • S. Biesemans S. Kubicek and K. De Meyer Analytical calculations of a figure of merit for novel MOSFET architecture's for the sub-0.25-μm range in Tech. Dig. NUPAD V. 1994 pp. 11-14.
    • Tech. Dig. NUPAD V. 1994 Pp. 11-14.
    • Biesemans, S.1    Kubicek, S.2    De Meyer, K.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.