Transport equations for highly doped devices and heterostructures

Solid State Electronics

Volumn 30, Issue 11, 1987, Pages 1089-1093

  Marshak, Alan H ^a  

^a LOUISIANA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTOR MATERIALS - CHARGE CARRIERS;

CARRIER DEGENERACY; CURRENT-DENSITY; GRADED COMPOSITION; HIGHLY DOPED DEVICES; NONUNIFORM BAND STRUCTURE;

SEMICONDUCTOR DEVICES;

EID: 0022813389     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/0038-1101(87)90071-2     Document Type: Article

References (15)

1. Transport equations in heavy doped silicon
2. The influence of heavy doping on the emitter efficiency of a bipolar transistor
3. Systematic analytical solutions for minority-carrier transport in semiconductors with position-dependent composition, with application to heavily doped silicon
4. Rigid band analysis of heavily doped semiconductor devices