SUB-50 NM GATE LENGTH N-MOSFETS WITH 10 NM PHOSPHORUS SOURCE AND DRAIN JUNCTIONS

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 1993, Pages 119-122

  Ono, Mizuki ^a   Saito, Masanobu ^a   Yoshitomi, Takashi ^a   Fiegna, Claudio ^a,b   Ohguro, Tatsuya ^a   Iwai, Hiroshi ^a  

^a TOSHIBA CORPORATION   (Japan)

^b UNIVERSITY OF BOLOGNA   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

IMPACT IONIZATION; PHOSPHORUS; DIFFUSION; GATES (TRANSISTOR); ION IMPLANTATION; LITHOGRAPHY; SEMICONDUCTOR DEVICE MANUFACTURE;

DRAIN JUNCTIONS; GATE-LENGTH; NANOMETER GATES; NMOSFET; NMOSFETS; PHOSPHORUS SOURCES; SHALLOW SOURCES; SOURCE AND DRAINS; SOURCE JUNCTIONS; SUB-50 NM;

MOSFET DEVICES;

PHOSPHORUS DOPED SILICATED GLASS (PSG); PHOSPHORUS SOURCE AND DRAIN JUNCTIONS; SOLID PHASE DIFFUSION (SPD);

EID: 0027878002     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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