-
1
-
-
0018029753
-
IEEE Trans. Electron. Devices
-
C. Andre, T. Salama, and J. G. Oakes, IEEE Trans. Electron. Devices, “Nonplanar power field-effect transistors,” vol. ED-25, p. 1222, 1978.
-
(1978)
“Nonplanar power field-effect transistors,”
, vol.ED-25
, pp. 1222
-
-
Andre, C.1
Salama, T.2
Oakes, J.G.3
-
2
-
-
0020292188
-
IEEE Trans. Electron. Devices
-
J. Y. Tang and K. Hess, IEEE Trans. Electron. Devices, “Investigation of transient electronic transport in GaAs following high energy injection,” vol. ED-29, p. 1906, 1982.
-
(1982)
“Investigation of transient electronic transport in GaAs following high energy injection,”
, vol.ED-29
, pp. 1906
-
-
Tang, J.Y.1
Hess, K.2
-
3
-
-
84951349874
-
Electron. Lett.
-
K. Tomizawa, Y. Awano, N. Hashirume, and M. Marashima, Electron. Lett., “Monte Carlo simulation of GaAs submicron n+ - n - n+ diode with GaAlAs heterojunction,” vol. 19, p. 1067, 1983.
-
(1983)
“Monte Carlo simulation of GaAs submicron n+ - n - n+ diode with GaAlAs heterojunction,”
, vol.19
, pp. 1067
-
-
Tomizawa, K.1
Awano, Y.2
Hashirume, N.3
Marashima, M.4
-
4
-
-
0019022389
-
Ballistic electron motion in GaAs at room temperature
-
L. F. Eastman, R. Stall, D. Woodard, N. Dandaker, C. E. C. Wood, M. S. Shur, and K. Board, Electron. Lett., “Ballistic electron motion in GaAs at room temperature,” vol. 16, p. 524, 1980.
-
(1980)
Electron. Lett.
, vol.16
, pp. 524
-
-
Eastman, L.F.1
Stall, R.2
Woodard, D.3
Dandaker, N.4
Wood, C.E.C.5
Shur, M.S.6
Board, K.7
-
5
-
-
0018986104
-
A 600-Volt MOSFET designed for low On-Resistance
-
A. K. Temple, R. P. Love, and P. V. Gray, IEEE Trans. Electron. Devices, “A 600-Volt MOSFET designed for low On-Resistance,” vol. ED-27, p. 343, 1980.
-
(1980)
IEEE Trans. Electron. Devices
, vol.ED-27
, pp. 343
-
-
Temple, A.K.1
Love, R.P.2
Gray, P.V.3
-
6
-
-
0020593173
-
Numerical comparison of DMOS, VMOS, and UMOS power transistors
-
A. Tamer, K. Rauch, and J. Moll, IEEE Trans. Electron. Devices, “Numerical comparison of DMOS, VMOS, and UMOS power transistors,” vol. ED-30, p. 73, 1983.
-
(1983)
IEEE Trans. Electron. Devices
, vol.ED-30
, pp. 73
-
-
Tamer, A.1
Rauch, K.2
Moll, J.3
-
8
-
-
0020733343
-
Self-aligned submicron gate digital GaAs integrated circuits
-
H. M. Levy and R. E. Lee, “Self-aligned submicron gate digital GaAs integrated circuits,” IEEE Trans. Electron. Device Lett., vol. EDL-4, p. 102, 1983.
-
(1983)
IEEE Trans. Electron. Device Lett.
, vol.EDL-4
, pp. 102
-
-
Levy, H.M.1
Lee, R.E.2
-
9
-
-
36749113795
-
A new lateral selective-area growth by liquid-phase-epitaxy: The formation of a lateral double-barrier buried-heterosturcture laser
-
W. T. Tsang, R. A. Logan, and J. P. Van der Ziel, Appl. Phys. Lett., “A new lateral selective-area growth by liquid-phase-epitaxy: The formation of a lateral double-barrier buried-heterosturcture laser,” vol. 40, p. 942, 1982.
-
(1982)
Appl. Phys. Lett.
, vol.40
, pp. 942
-
-
Tsang, W.T.1
Logan, R.A.2
Van der Ziel, J.P.3
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