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Volumn 5, Issue 7, 1984, Pages 228-230

Vertical FET's in GaAs

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTING GALLIUM ARSENIDE - APPLICATIONS;

EID: 0021453344     PISSN: 07413106     EISSN: 15580563     Source Type: Journal    
DOI: 10.1109/EDL.1984.25899     Document Type: Article
Times cited : (2)

References (9)
  • 5
  • 6
    • 0020593173 scopus 로고
    • Numerical comparison of DMOS, VMOS, and UMOS power transistors
    • A. Tamer, K. Rauch, and J. Moll, IEEE Trans. Electron. Devices, “Numerical comparison of DMOS, VMOS, and UMOS power transistors,” vol. ED-30, p. 73, 1983.
    • (1983) IEEE Trans. Electron. Devices , vol.ED-30 , pp. 73
    • Tamer, A.1    Rauch, K.2    Moll, J.3
  • 8
    • 0020733343 scopus 로고
    • Self-aligned submicron gate digital GaAs integrated circuits
    • H. M. Levy and R. E. Lee, “Self-aligned submicron gate digital GaAs integrated circuits,” IEEE Trans. Electron. Device Lett., vol. EDL-4, p. 102, 1983.
    • (1983) IEEE Trans. Electron. Device Lett. , vol.EDL-4 , pp. 102
    • Levy, H.M.1    Lee, R.E.2
  • 9
    • 36749113795 scopus 로고
    • A new lateral selective-area growth by liquid-phase-epitaxy: The formation of a lateral double-barrier buried-heterosturcture laser
    • W. T. Tsang, R. A. Logan, and J. P. Van der Ziel, Appl. Phys. Lett., “A new lateral selective-area growth by liquid-phase-epitaxy: The formation of a lateral double-barrier buried-heterosturcture laser,” vol. 40, p. 942, 1982.
    • (1982) Appl. Phys. Lett. , vol.40 , pp. 942
    • Tsang, W.T.1    Logan, R.A.2    Van der Ziel, J.P.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.