A deep submicron Si1-xGex/Si vertical PMOSFET fabricated by Ge Ion implantation

IEEE Electron Device Letters

Volumn 19, Issue 1, 1998, Pages 13-15

  Liu, K C ^b   Ray, S K ^c   Oswal, S K ^b   Banerjee, S K ^a,b  

^a IEEE

^b The University of Texas at Austin   (United States)

^c INDIAN INSTITUTE OF TECHNOLOGY   (India)

Author keywords

Bandgap engineering; Hole mobility enhancement; Si1 xGex Si; Vertical MOSFET

Indexed keywords

ENERGY GAP; ION IMPLANTATION; OXIDATION; REACTIVE ION ETCHING; SEMICONDUCTING GERMANIUM; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; SPECTROSCOPY;

BANDGAP ENGINEERING; HOLE MOBILITY ENHANCEMENT; SECONDARY ION MASS SPECTROSCOPY; SOLID PHASE RECRYSTALLIZATION;

MOSFET DEVICES;

EID: 0031646476     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.650338     Document Type: Article

References (9)

1. H. B. Pein and J. D. Plummer, "Performance of the 3-D sidewall flash EPROM cell," in IEDM Tech. Dig., 1993, pp. 11-14.
2. L. Risch, W. H. Krautschneider, F. Hofmann, H. SchäFer, T. Aeugle, and W. Rösener, "Vertical MOS transistors with 70-nm channel length," IEEE Trans. Electron Devices, vol. 43, pp. 1495-1498, Sept. 1996.
3. K. L. Wang, S. G. Thomas, and M. O. Tanner, "SiGe band engineering for MOS, CMOS, and quantum effect devices," J. Mater. Sci. vol. 6, pp. 311-324, 1995.
4. S. Verdonckt-Vandebroek, E. F. Crabbé, B. S. Meyerson, D. L. Harame, P. J. Restle, J. M. C. Stork, and J. B. Johnson, "SiGe-channel heterojunction p-MOSFET's," IEEE Trans. Electron Devices, vol. 41, pp. 90-100, Jan. 1994.
5. x grown on 〈100〉 silicon substrate," IEEE Trans. Electron Devices. vol. 39, pp. 2082-2089, Sept. 1992.
6. H. Jiang and R. G. Elliman, "Electrical properties of GeSi surface-and buried-channel p-MOSFET's fabricated by Ge implantation," IEEE Trans. Electron Devices, vol. 43, pp. 97-103, Sept. 1996.
7. C. R. Selvakumar and B. Hecht, "SiGe-channel n-MOSFET by germanium implantation." IEEE Electron Device Lett., vol. 12, pp 444-446, Aug. 1991.
8. D. K. Nayak, K. Goto, A. Yutani, J. Murota, and Y. Shiraki, "High-mobility strained-Si PMOSFET's," IEEE Trans. Electron Devices, vol. 43, pp. 1709-1715, Oct. 1996.
9. T. Manku, J. M. McGregor, A. Nathan, D. J. Roulston, J.-P. Noel, and D. C. Houghton, "Drift hole mobility in strained and unstrained doped SiGe alloys," IEEE Trans. Electron Devices. vol. 40, pp. 1990-1996, Nov. 1993.