The vertical heterojunction MOSFET

Thin Solid Films

Volumn 336, Issue 1-2, 1998, Pages 299-305

  De Meyer, Kristin ^a,b   Caymax, Matty ^a   Collaert, Nadine ^a   Loo, Roger ^a   Verheyen, Peter ^a  

^a IMEC   (Belgium)

^b UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

Drain induced barrier lowering (DIBL); Metal oxide semiconductor

Indexed keywords

EPITAXIAL GROWTH; HETEROJUNCTIONS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; THIN FILM TRANSISTORS;

DRAIN INDUCED BARRIER LOWERING (DIBL);

MOSFET DEVICES;

EID: 0032307502     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(98)01284-X     Document Type: Article

References (7)

1. National Technology Roadmap for Semiconductors, Semiconductor Industry Association, San Jose, CA, 1997.
2. M. Ono, M. Saito, T. Yoshitomi, C. Fiegna, T. Ohguro, H. Iwai, IEEE TED 42 (10) (1995) 1822.
3. A. Hori, H. Nakaoka, H. Umimoto, K. Yamashita, M. Takase, N. Shimizu, B. Mizuno, S. Odanaka, IEDM 94, pp. 485-488.
4. H. Gössner, W. Kiunke, I. Eisele, L. Rish, K. Hofmann, R. Treichler, H. Cerva, SSDM, 1993, pp. 422-424.
5. H. Gössner, F. Wittmann, I. Eisele, T. Grabolla, D. Behammer, Electron. Lett. 31 (16) (1995) 1394.
6. R. Cartuyvels, L. Dupas, Proc. of the JSPE-IFTP WC 5.3 DIISM'93 Workshop, Tokyo, Japan, November 8-10, 1993.
7. R. Loo, M. Caymax, P. Verheyen, et al, Proc. of the ESSDERC '98, Bordeaux, France, Sept. 8-10, 1998, p. 608.