Band alignments of coherently strained GexSi1-x/Si heterostructures on 〈001〉 GeySi1-y substrates

Applied Physics Letters

Volumn 48, Issue 8, 1986, Pages 538-540

  People, R ^a   Bean, J C ^a  

^a LUCENT TECHNOLOGIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; SEMICONDUCTING SILICON;

CONDUCTION BANDS; ENERGY GAP; GERMANIUM SILICIDES; MULTILAYERS; PSEUDOPOTENTIAL;

SEMICONDUCTOR DEVICES;

EID: 0022664894     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.96499     Document Type: Article

References (0)