Analytical calculations of a figure of merit for novel MOSFET architecture for the sub 0.25 μm range

1994 International Workshop on Numerical Modeling of Processes and Devices for Integrated Circuits, NUPAD 1994

Volumn , Issue , 1994, Pages 11-14

  Biesemans, S ^a   Kubicek, S ^a   De Meyer, K ^a  

^a IMEC   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

INTEGRATED CIRCUITS; NUMERICAL MODELS; POISSON EQUATION;

2D POISSON; 2D THEORY; ANALYTICAL CALCULATION; EXPLICIT SOLUTIONS; FIGURE OF MERITS; JUNCTION DEPTH; MOS-FET; SHORT-CHANNEL EFFECT;

MOSFET DEVICES;

EID: 0041971896     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/NUPAD.1994.343502     Document Type: Conference Paper

References (9)

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3. D.Frank, "MC simulation of a 30 nm dual-gate MOSFET", IEDM, p. 553, 1992
4. J.Wo0, "2D analytic modelling of very thin SO1 MOSFET", IEEE Trans. Electron Devices, vol. ED-37, p. 1999, September 1990
5. P.Lin, "A new approach to analytically solving the 2D Poisson's equation", IEEE Trans.Electron Devices, vol. ED-34, p. 1747, 1987
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7. T.Toyabe, "Analytical models of VT and VBD of short-channel MOSFET's", IEEE J. Solid-state Circuits, p. 375, April 1979
8. TMA, "MEDIC1 a 2D simulation program", manual version 1.1, 1993
9. H.Iwai, "CMOS device architecture and technology for the 0.25pm to 0.025pm generation", ESSDERC, Grenoble, p. 513, 1993