Stacked gate dielectrics with TaO for future CMOS technologies

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 1998, Pages 216-217

  Kizilyalli, I C ^a   Roy, P K ^a   Baumann, F ^a   Huang, R Y ^a   Hwang, D ^a   Chacon, C ^a   Irwin, R ^a   Ma, Y ^a   Alers, G ^a  

^a NOKIA RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER MOBILITY; CURRENT VOLTAGE CHARACTERISTICS; DIELECTRIC MATERIALS; INTERFACES (MATERIALS); LITHOGRAPHY; PERMITTIVITY; SILICA; SYNTHESIS (CHEMICAL); TANTALUM COMPOUNDS;

STACKED GATE DIELECTRIC MATERIALS; TANTALUM OXIDE;

CMOS INTEGRATED CIRCUITS;

EID: 0031624231     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)