Stack capacitor technology with (Ba,Sr)TiO3 dielectrics and Pt electrodes for 1giga-bit density DRAM

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 1996, Pages 24-25

  Park, Soon Oh ^a   Hwang, Cheol Seong ^a   Kang, Chang Suk ^a   Cho, Hag Ju ^a   Lee, Byoung Teak ^a   Yoo, Won Jong ^a   Park, Young So ^a   Lee, Sang In ^a   Lee, Moon Yong ^a  

^a SAMSUNG Electronics   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

BARIUM TITANATE; CURRENT DENSITY; DIELECTRIC MATERIALS; ELECTRODES; ELECTRON DEVICE MANUFACTURE; PERMITTIVITY; PLATINUM; RANDOM ACCESS STORAGE; SILICA; SILICON; SPUTTERING; STRONTIUM COMPOUNDS;

DYNAMIC RANDOM ACCESS STORAGE; LEAKAGE CURRENT DENSITY; MEMORY CAPACITOR FABRICATION; STACK CAPACITOR;

CAPACITORS;

EID: 0029703316     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (3)