Accurate Doping Profile Determination Using TED/QM Models Extensible to Sub-Quarter Micron nMOSFETs

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 1996, Pages 811-814

  Vande Voorde, P ^a   Griffint, P B ^b   Yut, Z ^b   Oh, S Y ^a   Duttont, R W ^b  

^a HEWLETT PACKARD LABORATORIES   (United States)

^b Stanford University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; MOSFET DEVICES; QUANTUM THEORY; COMPUTER SIMULATION; ELECTRIC VARIABLES MEASUREMENT; MATHEMATICAL MODELS;

BODY EFFECT; CAPACITANCE-VOLTAGE CURVE; DEVICE CHARACTERISTICS; DIFFUSION QUANTUM; DOPING PROFILES; NMOSFETS; POLY OXIDE; POLY-DEPLETION; QUANTUM MECHANICAL MODEL; TRANSIENT ENHANCED DIFFUSION;

THRESHOLD VOLTAGE; SEMICONDUCTOR DOPING;

BODY EFFECT; CAPACITANCE VOLTAGE CURVES; DRAIN INDUCED BARRIER LOWERING; THRESHOLD VOLTAGE; TRANSIENT ENHANCED DIFFUSION;

EID: 0030416118     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.1996.554103     Document Type: Conference Paper

References (6)

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