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Volumn 68, Issue 6, 1996, Pages 812-814

Low-temperature AlGaAs/GaAs multiple quantum well structure and its application to photorefractive devices

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION SPECTROSCOPY; ANNEALING; ELECTRIC CONDUCTIVITY; ELECTRIC FIELDS; ELECTROOPTICAL EFFECTS; INTERFACES (MATERIALS); LOW TEMPERATURE OPERATIONS; MOLECULAR BEAM EPITAXY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; THERMAL EFFECTS; TRANSMISSION ELECTRON MICROSCOPY;

EID: 0030569844     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.116541     Document Type: Article
Times cited : (8)

References (17)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.