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Volumn 21, Issue 3, 1996, Pages 189-263

Molecular beam epitaxy of nonstoichiometric semiconductors and multiphase material systems

Author keywords

Arsenic precipitates; GaAs; LT GaAs; LTG GaAs; Molecular beam epitaxy

Indexed keywords

ANNEALING; ARSENIC; ELECTRIC PROPERTIES; GALLIUM; OPTICAL PROPERTIES; PRECIPITATION (CHEMICAL); SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0029773675     PISSN: 10408436     EISSN: None     Source Type: Journal    
DOI: 10.1080/10408439608241256     Document Type: Article
Times cited : (57)

References (155)
  • 82
    • 0003322720 scopus 로고
    • Photorefractive quantum wells and thin films
    • Chap. 7, Nolte, D. D., Ed., Kluwer Academic Publishers, Dordrecht
    • Nolte, D. D. and Melloch, M. R., Photorefractive quantum wells and thin films, in Photorefractive Effects and Materials, Chap. 7, Nolte, D. D., Ed., Kluwer Academic Publishers, Dordrecht, 1995.
    • (1995) Photorefractive Effects and Materials
    • Nolte, D.D.1    Melloch, M.R.2
  • 155
    • 85033823080 scopus 로고    scopus 로고
    • private communication
    • Pollak, F. H., private communication.
    • Pollak, F.H.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.