The compensation and depletion behavior of iron doped GaAs grown by molecular beam epitaxy

Applied Physics Letters

Volumn 69, Issue 13, 1996, Pages 1885-1887

  McInturff, D T ^a   Harmon, E S ^a   Chang, J C P ^a   Pekarek, T M ^a   Woodall, J M ^a  

^a PURDUE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0004965413     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.117466     Document Type: Article

References (11)

1. M. R. Melloch, N. Otsuka, J. M. Woodall, and A. C. Warren, Appl. Phys. Lett. 57, 1531 (1990).
2. A. C. Warren, J. M. Woodall, J. L. Freeouf, D. Grischkowsky, D. T. McInturff, M. R. Melloch, and N. Otsuka, Appl. Phys. Lett. 57, 1331 (1990).
3. N. Atique, E. S. Harmon, J. C. P. Chang, J. M. Woodall, and M. R. Melloch, J. Appl. Phys. 77, 1471 (1995).
4. D. T. McInturff, J. M. Woodall, A. C. Warren, N. Braslau, G. D. Pettit, P. D. Kirchner, and M. R. Melloch, Appl. Phys. Lett. 60, 448 (1992).
5. F. W. Smith, A. R. Calawa, Chang-Lee Chen, M. J. Mantra, and L. J. Mahoney, IEEE Electron Device Lett. EDL-9, 77 (1988).
6. A. C. Warren, N. Katzenellenbogen, D. Grischkowski, J. M. Woodall, M. R. Melloch, and N. Otsuka, Appl. Phys. Lett. 58, 1512 (1991).
7. R. M. Feenstra, A. Vaterlaus, J. M. Woodall, and G. D. Pettit, Appl. Phys. Lett. 63, 2528 (1993).
8. M. W. Bench, C. B. Carter, Feng Wang, and P. I. Cohen, Appl. Phys. Lett. 66, 2400 (1995).
9. J. C. P. Chang, N. Otsuka, E. S. Harmon, M. R. Melloch, and J. M. Woodall, Appl. Phys. Lett. 65, 2801 (1994).
10. G. Mandel, Phys. Rev. A 134, 1073 (1964)
11. A. G. Milnes, Advances in Electron. Electron Phys. 61, 63 (1983).