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Applied Physics Letters

Volumn 69, Issue 10, 1996, Pages 1465-1467

The role of point defects and arsenic precipitates in carrier trapping and recombination in low-temperature grown GaAs

(4) Lochtefeld, A J a Melloch, M R a Chang, J C P a Harmon, E S b

a PURDUE UNIVERSITY (United States)

b MellWood Laboratories Inc (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000027062 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.116909 Document Type: Article

Times cited : (116)

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