Characteristics of InAsP/InGaAsP edge emitting laser diodes obtained by localised fusion on GaAs substrates

Electronics Letters

Volumn 33, Issue 23, 1997, Pages 1954-1955

  Syrbu, A V ^a   Fernandez, J ^a   Behrend, J ^a   Sagalowicz, L ^a   Iakovlev, V P ^a,b   Carlin, J F ^a   Berseth, C A ^a   Rudra, A ^a   Kapon, E ^a  

^a EPFL   (Switzerland)

^b TECHNICAL UNIVERSITY OF MOLDOVA   (Moldova)

Author keywords

Chemical beam epitaxial growth; Gallium arsenide; Surface emitting lasers

Indexed keywords

ANNEALING; CHEMICAL BEAM EPITAXY; LOW TEMPERATURE OPERATIONS; POINT DEFECTS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR QUANTUM WELLS; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY;

SURFACE EMITTING LASERS;

SEMICONDUCTOR LASERS;

EID: 0031556568     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19971369     Document Type: Article

References (7)

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