Effect of proton implantation on the degradation of GaAs/AlGaAs vertical cavity surface emitting lasers

Electronics Letters

Volumn 33, Issue 2, 1997, Pages 137-139

  Jiang, W ^a   Gaw, C ^a   Kiely, P ^a   Lawrence, B ^a   Lebby, M ^a   Claisse, P R ^a  

^a MOTOROLA INC   (United States)

Author keywords

Electroluminescence; Vertical cavity surface emitting lasers

Indexed keywords

CRYSTAL DEFECTS; ELECTROLUMINESCENCE; ION IMPLANTATION; RELIABILITY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DOPING;

VERTICAL CAVITY SURFACE EMITTING LASERS (VCSEL);

SEMICONDUCTOR LASERS;

EID: 0030869763     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19970088     Document Type: Article

References (13)

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