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Volumn 68, Issue 14, 1996, Pages 1972-1974
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Picosecond dynamic response of nanoscale low-temperature grown GaAs metal-semiconductor-metal photodetectors
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Author keywords
[No Author keywords available]
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Indexed keywords
BOUNDARY CONDITIONS;
COMPUTER SIMULATION;
DYNAMIC RESPONSE;
ELECTRIC CURRENTS;
ELECTRIC FIELDS;
FABRICATION;
IMPURITIES;
MONTE CARLO METHODS;
SCANNING ELECTRON MICROSCOPY;
SEMICONDUCTING GALLIUM ARSENIDE;
ULTRAFAST PHENOMENA;
AIRY WAVE FUNCTIONS;
FULL WIDTH AT HALF MAXIMUM;
INTERVALLEY DEFORMATION POTENTIAL;
LASER EXCITATIONS;
METAL SEMICONDUCTOR METAL PHOTODETECTORS;
PHOTOMIXERS;
POLAR OPTICAL TRANSITIONS;
PHOTODETECTORS;
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EID: 0030127817
PISSN: 00036951
EISSN: None
Source Type: Journal
DOI: 10.1063/1.115643 Document Type: Article |
Times cited : (12)
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References (16)
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