Ultrafast carrier trapping and high resistivity of MeV energy ion implanted GaAs

Acta Physica Polonica A

Volumn 90, Issue 4, 1996, Pages 851-854

  Korona, K P ^a   Jasinski J ^a   Kurpiewski, A ^a   Kaminska M ^a   Jagadish, C ^b   Tan, H H ^b   Krotkus, A ^c   Marcinkevicius, S ^c  

^a UNIVERSITY OF WARSAW   (Poland)

^b AUSTRALIAN NATIONAL UNIVERSITY   (Australia)

^c CENTER FOR PHYSICAL SCIENCES AND TECHNOLOGY   (Lithuania)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 1542502579     PISSN: 05874246     EISSN: None     Source Type: Journal    
DOI: 10.12693/APhysPolA.90.851     Document Type: Article

References (4)

1. F. Smith, A.R. Calawa, C.L. Chen, M.J. Mantra, L.J. Mahoney, IEEE Electron. Device Lett. 9, 77 (1988).
2. K.P. Korona, Acta Phys. Pol. A 88, 463 (1995).
3. A. Krotkus, S. Marcinkevicius, J. Jasinski, M. Kaminska, H.H. Tan, C. Jagadish, Appl. Phys. Lett. 66, 3304 (1995).
4. A. Krotkus, S. Marcinkevicius, V. Pasiskevicius, U. Olin, Semicond. Sci. Technol. 9, 1382 (1994).