Above band gap absorption spectra of the arsenic antisite defect in low temperature grown GaAs and AlGaAs

Applied Physics Letters

Volumn 68, Issue 1, 1996, Pages 37-39

  Dankowski, S U ^a   Streb, D ^a   Ruff, M ^a   Kiesel, P ^a   Kneissl, M ^a   Knupfer B ^a   Dohler G H ^a   Keil, U D ^b   Sorenson C B ^b   Verma, A K ^c  

^a UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

^b TECHNICAL UNIVERSITY OF DENMARK   (Denmark)

^c UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; BAND STRUCTURE; DEFECTS; ELECTRON TRANSITIONS; ENERGY GAP; PHOTONS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; THERMAL EFFECTS;

ABSORPTION COEFFICIENTS; ALUMINUM GALLIUM ARSENIDE; ANTISITE DEFECT; FABRY-PEROT OSCILLATIONS; PHOTON ENERGY;

ABSORPTION SPECTROSCOPY;

EID: 0029732056     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.116748     Document Type: Article

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