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Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 14, Issue 3, 1996, Pages 2278-2281

In situ and ex situ spectroscopic investigation of low temperature grown gallium arsenide by molecular beam epitaxy

(5) Eyink, Kurt G a Capano, M A a Walck, S D a Haas, T W a Streetman, Ben G b

a AIR FORCE RESEARCH LABORATORY (United States)

b The University of Texas at Austin (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 3242822093 PISSN: 10711023 EISSN: None Source Type: Journal
DOI: 10.1116/1.588919 Document Type: Article

Times cited : (8)

References (14)

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