argon ion-implantation on polysilicon or amorphous-silicon for boron penetration suppression in p+ pMOSFET

IEEE Transactions on Electron Devices

Volumn 45, Issue 8, 1998, Pages 1737-1744

  Lee, Lurng Shehng ^a,b,c   Lee, Chung Len ^a,b,c  

^a IEEE   (Taiwan)

^b NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^c INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE   (Taiwan)

Author keywords

Ar implantation; Boron penetration; P+ pmosfet

Indexed keywords

CAPACITORS; ELECTRIC BREAKDOWN; GATES (TRANSISTOR); ION IMPLANTATION; SEMICONDUCTING SILICON; SILICON WAFERS;

BORON PENETRATION; CHARGE TO BREAKDOWN; DIELECTRIC BREAKDOWN;

MOSFET DEVICES;

EID: 0032141961     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.704373     Document Type: Article

References (16)

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