SCOPUS 정보 검색 플랫폼

Volumn 57, Issue 24, 1990, Pages 2573-2575

Anomalous capacitance-voltage characteristics of BF2-implanted and rapid thermal annealed p+-polycrystalline silicon gate metal-oxide-semiconductor structures

(3) Lo, G Q a Kwong, D L a Lee, S b

a UNIVERSITY OF TEXAS AT AUSTIN (United States)

b NCR CORPORATION (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0039578981 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.103819 Document Type: Article

Times cited : (13)

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