A Comprehensive Study on p+ Poly silicon-Gate MOSFET’s Instability with Fluorine Incorporation

IEEE Transactions on Electron Devices

Volumn 37, Issue 11, 1990, Pages 2312-2321

  Sung, Janmye James ^a   Lu, Chih Yuan ^a  

^a LUCENT TECHNOLOGIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BORON; ELECTRIC PROPERTIES; FLUORINE; SEMICONDUCTING SILICON - ION IMPLANTATION;

I-V CHARACTERISTICS; POLYSILICON;

SEMICONDUCTOR DEVICES, MOSFET;

EID: 0025522695     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.62294     Document Type: Article

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