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Volumn 72, Issue 10, 1992, Pages 4683-4695

Positive charge generation in SiO2 by electron-impact emission of trapped electrons

Author keywords

[No Author keywords available]

Indexed keywords


EID: 0001323947     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.352074     Document Type: Article
Times cited : (32)

References (48)
  • 25
    • 0017271820 scopus 로고
    • See Fig. 1 and Table on Intrinsic Defects on p. 1564 for the bridging oxygen vacancy [formula omitted] For a recent review, see C. T. Sah and C. C. H. Hsu, Properties of Silicon (INSPEC, London), 1988, Secs. 17.5 and 532
    • (1976) IEEE Trans. Nucl. Sci. , vol.NS-23 , pp. 1563
    • Sah, C.T.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.