Charges Trapped Throughout the Oxide and Their Impact on the Fowler-Nordheim Current in MOS Devices

IEEE Transactions on Electron Devices

Volumn 41, Issue 9, 1994, Pages 1669-1672

  Ku, Pon S ^a   Schroder, Dieter K ^a  

^a ARIZONA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITORS; CURRENT DENSITY; ELECTRIC CHARGE; ELECTRIC CONDUCTIVITY; ELECTRIC CURRENTS; ELECTRIC FIELDS; ELECTRON TUNNELING; FABRICATION; OXIDES; VOLTAGE MEASUREMENT;

BARRIER HEIGHT MEASUREMENT; CURRENT STRESS; FOWLER NORDHEIM CURRENT; TRAPPED CHARGE;

MOS DEVICES;

EID: 0028514381     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.310123     Document Type: Article

References (11)

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