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Journal of Applied Physics

Volumn 57, Issue 2, 1985, Pages 418-425

The effect of gate metal and SiO2 thickness on the generation of donor states at the Si-SiO2 interface

(3) Fischetti, M V a Weinberg, Z A a Calise, J A a

a IBM T J WATSON RESEARCH CENTER (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 36549094375 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.334767 Document Type: Article

Times cited : (104)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.