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Volumn , Issue , 1983, Pages 182-185

CHARACTERIZATION OF SIMULTANEOUS BULK AND INTERFACE HIGH-FIELD TRAPPING EFFECTS IN SiO//2.

Author keywords

[No Author keywords available]

Indexed keywords

C-V AND I-V MEASUREMENTS; INTERFACE STATE GENERATION; MEASUREMENT PRINCIPLE; NEGATIVE CHARGE; POLYSILICON-OXIDE-SILICON CAPACITORS; POSITIVE CHARGE;

EID: 0020883248     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper
Times cited : (32)

References (0)
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.