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Volumn , Issue , 1983, Pages 182-185
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CHARACTERIZATION OF SIMULTANEOUS BULK AND INTERFACE HIGH-FIELD TRAPPING EFFECTS IN SiO//2.
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NONE
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Author keywords
[No Author keywords available]
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Indexed keywords
C-V AND I-V MEASUREMENTS;
INTERFACE STATE GENERATION;
MEASUREMENT PRINCIPLE;
NEGATIVE CHARGE;
POLYSILICON-OXIDE-SILICON CAPACITORS;
POSITIVE CHARGE;
SEMICONDUCTING SILICON COMPOUNDS;
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EID: 0020883248
PISSN: 01631918
EISSN: None
Source Type: Conference Proceeding
DOI: None Document Type: Conference Paper |
Times cited : (32)
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References (0)
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