Correlation of stress-induced leakage current in thin oxides with trap generation inside the oxides

IEEE Transactions on Electron Devices

Volumn 40, Issue 5, 1993, Pages 986-993

  Dumin, David J ^a   Maddux, Jay R ^b  

^a CLEMSON UNIVERSITY   (United States)

^b UNIVERSITY OF VIRGINIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE CARRIERS; ELECTRIC CURRENT MEASUREMENT; ELECTRON TUNNELING; LEAKAGE CURRENTS; OXIDES; THIN FILMS; TRANSIENTS;

EEPROM CELLS; PRE-TUNNELING LEAKAGE CURRENTS; SCHOTTKY EMISSION; STRESS POLARITY; STRESS-GENERATED TRAP DISTRIBUTIONS; STRESS-INDUCED LEAKAGE CURRENT; THIN OXIDES; TRANSIENT CURRENTS;

SEMICONDUCTOR STORAGE;

EID: 0027592414     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.210209     Document Type: Article

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