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Journal of Applied Physics

Volumn 54, Issue 10, 1983, Pages 5793-5800

High field current induced-positive charge transients in SiO2

(3) Nissan Cohen, Y a Shappir, J a Frohman Bentchkowsky, D a

a HEBREW UNIVERSITY OF JERUSALEM (Israel)

Author keywords

[No Author keywords available]

Indexed keywords

SILICA;

EID: 0020832117 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.331805 Document Type: Article

Times cited : (65)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.