Analysis of delay time instability according to the operating frequency in field shield isolated soi circuits

IEEE Transactions on Electron Devices

Volumn 45, Issue 7, 1998, Pages 1479-1486

  Maeda, Shigenobu ^a   Yamaguchi, Yasuo ^a   Kim, Il Jung ^a   Iwamatsu, Toshiaki ^a   Ipposhi, Takashi ^a   Miyamoto, Shoichi ^b   Maegawa, Shigeto ^b   Ueda, Kimio ^b   Nil, Koji ^b   Mashiko, Koichiro ^b   Inoue, Yasuo ^b   Nishimura, Tadashi ^b   Miyoshi, Hirokazu ^b  

^a MITSUBISHI ELECTRIC CORPORATION   (Japan)

^b IXYS Corporation   (United States)

Author keywords

Capacitance; Circuit stability; Frequency, highspeed integrated circuit; Isolation technology; Resistance; Siliconon insulator technology; SIMOX; Simulation

Indexed keywords

COMPUTER SIMULATION; INTEGRATED CIRCUITS; RADIATION SHIELDING; SILICON ON INSULATOR TECHNOLOGY; STABILITY;

ISOLATION TECHNOLOGY;

MOSFET DEVICES;

EID: 0032123066     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.701478     Document Type: Article

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