Suppression of the SOI floating-body effects by linked-body device structure

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 1996, Pages 92-93

  Chen, W ^a   Taur, Y ^a   Sadana, D ^a   Jenkins, K A ^a   Sun, J ^a   Cohen, S ^a  

^a IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BIPOLAR TRANSISTORS; CMOS INTEGRATED CIRCUITS; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC BREAKDOWN; ELECTRIC VARIABLES MEASUREMENT; MOSFET DEVICES; OSCILLATORS (ELECTRONIC); RANDOM ACCESS STORAGE; SILICON ON INSULATOR TECHNOLOGY;

CURRENT VOLTAGE CHARACTERISTICS MEASUREMENT; FLOATING BODY EFFECTS; LINKED BODY DEVICE STRUCTURE; RING OSCILLATORS; TRANSIENT DRAIN CURRENT OVERSHOOT;

SEMICONDUCTOR DEVICE STRUCTURES;

EID: 0029723460     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (0)