A method for the prediction of hot-carrier lifetime in floating SOI NMOSFET's

IEEE Transactions on Electron Devices

Volumn 44, Issue 12, 1997, Pages 2200-2206

  Maeda, Shigenobu ^a   Yamaguchi, Yasuo ^a,b   Kim, I I Jung ^a,b   Joachim, Hans Oliver ^c   Inoue, Yasuo ^b   Miyoshi, Hirokazu ^a,b   Yasuoka, Akihiko ^a,b  

^a MITSUBISHI ELECTRIC CORPORATION   (Japan)

^b IXYS Corporation   (United States)

^c Siemens Components Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; HOT CARRIERS; SEMICONDUCTOR DEVICE STRUCTURES; SILICON ON INSULATOR TECHNOLOGY; SUBSTRATES;

DRAIN CURRENT; HOT CARRIER LIFETIMES; SUBSTRATE CURRENT;

MOSFET DEVICES;

EID: 0031366647     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.644636     Document Type: Article

References (15)

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