On the Transient Operation of Partially Depleted SOI NMOSFET's

IEEE Electron Device Letters

Volumn 16, Issue 11, 1995, Pages 497-499

  Gautier, Jacques ^a   Sun, Jack Y C ^a  

^a IBM T J WATSON RESEARCH CENTER   (United States)

^b CEA LETI   (France)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CURRENTS; ELECTRODES; GATES (TRANSISTOR); IONIZATION; SILICON ON INSULATOR TECHNOLOGY; TRANSIENTS;

CAPACITIVE COUPLING; FLOATING BODY; IMPACT IONIZATION CURRENT; TWO DIMENSIONAL;

MOSFET DEVICES;

EID: 0029409871     PISSN: 07413106     EISSN: 15580563     Source Type: Journal    
DOI: 10.1109/55.468279     Document Type: Article

References (9)

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