Substantial advantages of fully-depleted CMOS/SIMOX devices as low-power high-performance VLSI components compared with its bulk-CMOS counterpart

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 1995, Pages 635-638

  Kado, Y ^a   Inokawa, H ^a   Okazaki, Y ^a   Tsuchiya, T ^a   Kawai, Y ^a   Sato, M ^a   Sakakibara, Y ^a   Nakayama, S ^a   Yamada, H ^a   Kitamura, M ^a   Nakashima, S ^a   Nishimura, K ^a   Date, S ^a   Ino, M ^a   Takeya, K ^a   et al , ^a  

^a NTT CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

GATES (TRANSISTOR); LEAKAGE CURRENTS; LOGIC GATES; MOSFET DEVICES; RANDOM ACCESS STORAGE; SEMICONDUCTOR DEVICES; VLSI CIRCUITS;

BULK GATE ARRAYS; SIMOX DEVICES; VOLTAGE;

CMOS INTEGRATED CIRCUITS;

EID: 0029491760     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (11)