A Physical Charge-Based Model for Non-Fully Depleted SOI MOSFET's and Its Use in Assessing Floating-Body Effects in SOI CMOS Circuits

IEEE Transactions on Electron Devices

Volumn 42, Issue 4, 1995, Pages 728-737

  Suh, Dongwook ^a   Fossum, Jerry G ^a  

^a UNIVERSITY OF FLORIDA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE CARRIERS; CMOS INTEGRATED CIRCUITS; COMPUTER SIMULATION; ELECTRIC CHARGE; ELECTRIC CURRENTS; GATES (TRANSISTOR); IONIZATION; SEMICONDUCTOR DEVICE MODELS; SILICON ON INSULATOR TECHNOLOGY;

FLOATING BODY EFFECTS; FREE CARRIER CHARGING; LOW VOLTAGE APPLICATIONS; PHYSICAL CHARGE BASED MODELS; SATURATION CURRENT; STATIC POWER; TEST DEVICE MEASUREMENTS;

MOSFET DEVICES;

EID: 0029287689     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.372078     Document Type: Article

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