Potential of MOMBE/CBE for the production of photonic devices in comparison with MOVPE

Journal of Crystal Growth

Volumn 188, Issue 1-4, 1998, Pages 231-246

  Veuhoff, E ^a  

^a SIEMENS AG   (Germany)

Author keywords

CBE; GaInAsP; Industrial applications; MOMBE; Monolithic integration; MOVPE; MQW lasers; Photonic devices; Production; Safety considerations; Selective area epitaxy; System design

Indexed keywords

CHEMICAL BEAM EPITAXY; METALLORGANIC VAPOR PHASE EPITAXY; MOLECULAR BEAM EPITAXY; MONOLITHIC INTEGRATED CIRCUITS; QUANTUM WELL LASERS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE STRUCTURES;

PHOTONIC DEVICES; SELECTIVE AREA EPITAXY;

OPTICAL DEVICES;

EID: 0032094941     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(98)00046-3     Document Type: Article

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