GRINSCH GaInAsP MQW laser structures grown by MOMBE

Journal of Crystal Growth

Volumn 188, Issue 1-4, 1998, Pages 266-274

  Baumeister, H ^a   Veuhoff, E ^a   Popp, M ^b   Heinecke, H ^b  

^a SIEMENS AG   (Germany)

^b UNIVERSITY OF ULM   (Germany)

Author keywords

CBE; GaInAsP; GRINSCH; InAsP; MOMBE; Strained MQW lasers; Thermal stability; Uniformity

Indexed keywords

CHEMICAL BEAM EPITAXY; CRYSTAL LATTICES; CRYSTAL STRUCTURE; ENERGY GAP; HETEROJUNCTION BIPOLAR TRANSISTORS; MOLECULAR BEAM EPITAXY; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM WELLS; THERMODYNAMIC STABILITY;

LATTICE MATCHING; METALLORGANIC MOLECULAR BEAM EPITAXY (MOMBE);

SEMICONDUCTING ALUMINUM COMPOUNDS;

EID: 0032097614     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(98)00065-7     Document Type: Article

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