Beam geometrical effects on planar selective area epitaxy of InP/GaInAs heterostructures

Journal of Crystal Growth

Volumn 164, Issue 1-4, 1996, Pages 302-307

  Wachter, M ^a   Heinecke, H ^a  

^a UNIVERSITY OF ULM   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

GEOMETRY; HETEROJUNCTIONS; MASKS; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM PHOSPHIDE;

BEAM GEOMETRICAL EFFECTS; GALLIUM INDIUM ARSENIDE; OPTICAL COUPLING; SELECTIVE AREA EPITAXY;

EPITAXIAL GROWTH;

EID: 0030191982     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/0022-0248(96)00002-4     Document Type: Article

References (10)

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