Lateral coupling of InP/GaInAsP/InP structures by selective area MOMBE

Journal of Crystal Growth

Volumn 175-176, Issue PART 2, 1997, Pages 1186-1194

  Wachter, M ^a   Schoffel U ^a   Schier, M ^b   Heinecke, H ^a  

^a UNIVERSITY OF ULM   (Germany)

^b SIEMENS AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

HYDRIDES; MASKS; METALLORGANIC VAPOR PHASE EPITAXY; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR GROWTH; SILICA; WAVEGUIDES;

LATERAL COUPLINGS; METALORGANIC MOLECULAR BEAM EPITAXY (MOMBE);

HETEROJUNCTIONS;

EID: 0031144255     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(96)01027-5     Document Type: Article

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